JPS58210660A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58210660A
JPS58210660A JP57094197A JP9419782A JPS58210660A JP S58210660 A JPS58210660 A JP S58210660A JP 57094197 A JP57094197 A JP 57094197A JP 9419782 A JP9419782 A JP 9419782A JP S58210660 A JPS58210660 A JP S58210660A
Authority
JP
Japan
Prior art keywords
type
metal wiring
basic cell
layer metal
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57094197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0534832B2 (en]
Inventor
Masao Mizuno
水野　正雄
Shinya Kusaka
日下　紳也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP57094197A priority Critical patent/JPS58210660A/ja
Publication of JPS58210660A publication Critical patent/JPS58210660A/ja
Publication of JPH0534832B2 publication Critical patent/JPH0534832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57094197A 1982-06-01 1982-06-01 半導体装置 Granted JPS58210660A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57094197A JPS58210660A (ja) 1982-06-01 1982-06-01 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57094197A JPS58210660A (ja) 1982-06-01 1982-06-01 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP3224774A Division JPH0824176B2 (ja) 1991-08-09 1991-08-09 半導体装置
JP4328589A Division JPH0824177B2 (ja) 1992-11-13 1992-11-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS58210660A true JPS58210660A (ja) 1983-12-07
JPH0534832B2 JPH0534832B2 (en]) 1993-05-25

Family

ID=14103568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57094197A Granted JPS58210660A (ja) 1982-06-01 1982-06-01 半導体装置

Country Status (1)

Country Link
JP (1) JPS58210660A (en])

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074648A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体集積回路装置
JPS6199348A (ja) * 1984-10-22 1986-05-17 Fujitsu Ltd ゲ−トアレイマスタスライス集積回路装置におけるクリツプ方法
JPS61123153A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd ゲ−トアレイｌｓｉ装置
JPS61214459A (ja) * 1985-03-19 1986-09-24 Toshiba Corp 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211872A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor device
JPS5621364A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor integrated circuit
JPS56148861A (en) * 1980-04-18 1981-11-18 Fujitsu Ltd Field effect semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211872A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor device
JPS5621364A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor integrated circuit
JPS56148861A (en) * 1980-04-18 1981-11-18 Fujitsu Ltd Field effect semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074648A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体集積回路装置
JPS6199348A (ja) * 1984-10-22 1986-05-17 Fujitsu Ltd ゲ−トアレイマスタスライス集積回路装置におけるクリツプ方法
JPS61123153A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd ゲ−トアレイｌｓｉ装置
JPS61214459A (ja) * 1985-03-19 1986-09-24 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPH0534832B2 (en]) 1993-05-25

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